FDB024N06 mosfet equivalent, n-channel mosfet.
* RDS(on) = 1.8 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low
RDS(on) .
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Synchronous Rectification .
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